M29F800FT5AM6F2 TR

M29FxxxFT/B Features Micron Parallel NOR Flash Embedded Memory Top/Bottom Boot Block 5V Supply M29F200FT/B, M29F400FT/B, M29F800FT/B, M29F160FT/B Features • RoHS-compliant packages – TSOP48 – SO44 (16Mb not available for this package) • Automotive device grade 3 – Temperature: –40 to +125°C • Automotive device grade 6 – Temperature: –40 to +85°C • Automotive grade certified (AEC-Q100) • Supply voltage – VCC = 5V • Access time: 55ns • Program/erase controller – Embedded byte/word program algorithms • Erase suspend and resume modes • Low power consumption – Standby and automatic standby • 100,000 PROGRAM/ERASE cycles per block • Electronic signature – Manufacturer code: 0x01h • Top device codes – M29F200FT: 0x2251 – M29F400FT: 0x2223 – M29F800FT: 0x22D6 – M29F160FT: 0x22D2 • Bottom device codes – M29F200FB: 0x2257 – M29F400FB: 0x22AB – M29F800FB: 0x2258 – M29F160FB: 0x22D8 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 1 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. Products and specifications discussed herein are subject to change by Micron without notice. M29FxxxFT/B Features Part Numbering Information Devices are shipped from the factory with memory content bits erased to 1. For available options, such as packages, or for further information, contact your Micron sales representative. Part numbers can be verified at www.micron.com. Feature and specification comparison by device type is available at www.micron.com/products. Contact the factory for devices not found. Table 1: Part Number Information Part Number Category Category Details Device Type M29F = 5V Density 200 = 2Mb 400 = 4Mb 800 = 8Mb 160 = 16Mb (not available in SO 44 package) Technology F = 110nm Configuration T = Top boot B = Bottom boot Speed 55 = 55ns device speed in conjunction with temperature range = 3, which denotes Auto Grade – 40 to 125 °C parts 5A = 55ns access time (Auto Grade) only in conjunction with the Grade 6 option Package M = SO 44 N = TSOP 48 12mm x 20mm AL 42 Temperature Range 6 = –40°C to +85°C Shipping Options blank = standard packing (Tray) 3 = –40°C to +125°C E = RoHS-compliant package, standard packing (tray) T = Tape and reel packing (24mm) F = RoHS-compliant package, tape and reel packing (24mm) Fab Location PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 2 = Fab 13 (Singapore) 2 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Features Contents General Description ......................................................................................................................................... 6 Signal Assignments ......................................................................................................................................... 15 TSOP Pin Assignments ................................................................................................................................ 15 Small-Outline Pin Assignments ................................................................................................................... 19 Signal Descriptions ......................................................................................................................................... 22 Bus Operations ............................................................................................................................................... 24 Read .......................................................................................................................................................... 24 Write .......................................................................................................................................................... 24 Output Disable ........................................................................................................................................... 24 Standby ..................................................................................................................................................... 24 Automatic Standby ..................................................................................................................................... 24 Command Interface ....................................................................................................................................... 25 READ/RESET Command ............................................................................................................................ 25 AUTO SELECT Command ........................................................................................................................... 25 PROGRAM Command ................................................................................................................................ 26 UNLOCK BYPASS Command ...................................................................................................................... 26 UNLOCK BYPASS PROGRAM Command ..................................................................................................... 27 UNLOCK BYPASS RESET Command ............................................................................................................ 27 CHIP ERASE Command .............................................................................................................................. 27 BLOCK ERASE Command ........................................................................................................................... 27 ERASE SUSPEND Command ....................................................................................................................... 28 ERASE RESUME Command ........................................................................................................................ 28 READ CFI QUERY Command ...................................................................................................................... 28 16-Bit Mode Commands ......................................................................................................................... 29 8-Bit Mode Commands ........................................................................................................................... 30 Block Protection Operations ........................................................................................................................... 31 Programmer Technique .............................................................................................................................. 32 In-System Technique .................................................................................................................................. 34 Status Register ................................................................................................................................................ 36 Data Polling Bit .......................................................................................................................................... 36 Toggle Bit ................................................................................................................................................... 37 Error Bit ..................................................................................................................................................... 38 Erase Timer Bit ........................................................................................................................................... 38 Alternative Toggle Bit .................................................................................................................................. 39 Common Flash Interface (CFI) ........................................................................................................................ 40 Maximum Ratings and Operating Conditions .................................................................................................. 44 DC Electrical Specifications ............................................................................................................................ 46 AC Read Characteristics .................................................................................................................................. 47 AC Write Characteristics ................................................................................................................................. 49 Reset Specifications ........................................................................................................................................ 51 PROGRAM/ERASE Characteristics .................................................................................................................. 52 Package Dimensions ....................................................................................................................................... 53 Revision History ............................................................................................................................................. 55 Rev. B – 2/14 ............................................................................................................................................... 55 Rev. A – 2/13 ............................................................................................................................................... 55 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 3 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Features List of Figures Figure 1: Logic Diagram ................................................................................................................................... 6 Figure 2: Block Addresses, M29F160 (x8) .......................................................................................................... 7 Figure 3: Block Addresses, M29F160 (x16) ......................................................................................................... 8 Figure 4: Block Addresses, M29F800 (x8) .......................................................................................................... 9 Figure 5: Block Addresses, M29F800 (x16) ....................................................................................................... 10 Figure 6: Block Addresses, M29F400 (x8) ........................................................................................................ 11 Figure 7: Block Addresses, M29F400 (x16) ....................................................................................................... 12 Figure 8: Block Addresses, M29F200 (x8) ........................................................................................................ 13 Figure 9: Block Addresses, M29F200 (x16) ....................................................................................................... 14 Figure 10: M29F160F ..................................................................................................................................... 15 Figure 11: M29F800F ..................................................................................................................................... 16 Figure 12: M29F400F ..................................................................................................................................... 17 Figure 13: M29F200F ..................................................................................................................................... 18 Figure 14: M29F800 ....................................................................................................................................... 19 Figure 15: M29F400 ....................................................................................................................................... 20 Figure 16: M29F200 ....................................................................................................................................... 21 Figure 17: Block Protect Flowchart – Programmer Equipment ......................................................................... 32 Figure 18: Chip Unprotect Flowchart – Programmer Equipment ..................................................................... 33 Figure 19: Block Protect Flowchart – In-System Equipment ............................................................................. 34 Figure 20: Chip Protection Flowchart – In-System Equipment ......................................................................... 35 Figure 21: Data Polling Flowchart ................................................................................................................... 37 Figure 22: Data Toggle Flowchart ................................................................................................................... 38 Figure 23: AC Measurement I/O Waveform ..................................................................................................... 44 Figure 24: AC Measurement Load Circuit ....................................................................................................... 45 Figure 25: Read Mode AC Waveforms ............................................................................................................. 47 Figure 26: Write AC Waveforms, Write Enable Controlled ................................................................................ 49 Figure 27: Write AC Waveforms, Chip Enable Controlled ................................................................................. 50 Figure 28: Reset/Block Temporary Unprotect AC Waveforms ........................................................................... 51 Figure 29: 48-Lead TSOP – 12mm x 20mm ...................................................................................................... 53 Figure 30: 44-Lead Small-Outline – 500 Mil ..................................................................................................... 54 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 4 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Features List of Tables Table 1: Part Number Information ................................................................................................................... 2 Table 2: Signal Descriptions ........................................................................................................................... 22 Table 3: Bus Operations ................................................................................................................................. 24 Table 4: Read Electronic Signature ................................................................................................................. 26 Table 5: 16-Bit Mode Commands (BYTE# = HIGH) .......................................................................................... 29 Table 6: 8-Bit Mode Commands (BYTE# = LOW) ............................................................................................. 30 Table 7: Block and Chip Protection Signal Settings .......................................................................................... 31 Table 8: Status Register Bits ........................................................................................................................... 36 Table 9: Query Structure Overview ................................................................................................................. 40 Table 10: CFI Query Identification String ........................................................................................................ 40 Table 11: CFI Query System Interface Information .......................................................................................... 41 Table 12: Device Geometry Definition ............................................................................................................ 41 Table 13: Primary Algorithm-Specific Extended Query Table ........................................................................... 42 Table 14: Security Code Area .......................................................................................................................... 43 Table 15: Absolute Maximum Ratings ............................................................................................................. 44 Table 16: Operating and AC Measurement Conditions .................................................................................... 44 Table 17: Device Capacitance ........................................................................................................................ 45 Table 18: DC Characteristics .......................................................................................................................... 46 Table 19: Read AC Characteristics .................................................................................................................. 47 Table 20: Write AC Characteristics, Write Enable Controlled ............................................................................ 49 Table 21: Write AC Characteristics, Chip Enable Controlled ............................................................................. 50 Table 22: Reset/Block Temporary Unprotect AC Characteristics ...................................................................... 51 Table 23: Program/Erase Characteristics ........................................................................................................ 52 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 5 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B General Description General Description This description applies specifically to the M29F 16Mb (2 Meg x 8 or 1 Meg x 16) nonvolatile memory device, but also applies to lower densities. The device enables READ, ERASE, and PROGRAM operations using a single, low-voltage (4.5–5.5V) supply. On power-up, the device defaults to read mode and can be read in the same way as a ROM or EPROM. The device is divided into blocks that can be erased independently, preserving valid data while old data is erased. Each block can be protected independently to prevent accidental PROGRAM or ERASE operations from modifying the memory. PROGRAM and ERASE commands are written to the command interface. An on-chip program/erase controller simplifies the process of programming or erasing the device by managing the operations required to update the memory contents. The end of a PROGRAM or ERASE operation can be detected and any error conditions identified. The command set required to control the memory is consistent with JEDEC standards. The blocks are asymmetrically arranged. The first or last 64KB have been divided into four additional blocks. The 16KB boot block can be used for small initialization code to start the microprocessor. The two 8KB parameter blocks can be used for parameter storage. The remaining 32KB is a small main block where the application may be stored. CE#, OE#, and WE# control the bus operation of the memory. They enable simple connection to most microprocessors, often without additional logic. Devices are offered in 48-pin TSOP (12mm x 20mm) and 44-pin small-outline packages. The device is supplied with all the bits erased (set to 1). Figure 1: Logic Diagram VCC 20 15 DQ[7:0] A[19:0] DQ[14:8] DQ15/A–1 WE# CE# OE# RY/BY# RST# BYTE# V SS PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 6 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B General Description Figure 2: Block Addresses, M29F160 (x8) Bottom boot block addresses (x8) Top boot block addresses (x8) 1FFFFFh 1FFFFFh 16KB 64KB 1F0000h 1EFFFFh 1FC000h 1FBFFFh 8KB 64KB 1FA000h 1F9FFFh 1E0000h Total of 31 64 KB blocks 8KB 1F8000h 1F7FFFh 32KB 1F0000h 1EFFFFh 01FFFFh 64KB 64KB 1E0000h 010000h 00FFFFh 32KB 008000h 007FFFh Total of 31 64 KB blocks 8KB 006000h 005FFFh 01FFFFh 64KB 8KB 004000h 003FFFh 010000h 00FFFFh 64KB 16KB 000000h 000000h PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 7 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B General Description Figure 3: Block Addresses, M29F160 (x16) Top boot block addresses (x16) Bottom boot block addresses (x16) FFFFFh FFFFFh 8 Kword 32 Kword FE000h FDFFFh F8000h F7FFFh 4 Kword 32 Kword FD000h FCFFFh F0000h Total of 31 32 Kword blocks 4 Kword FC000h FBFFFh 16 Kword F8000h F7FFFh 0FFFFh 32 Kword 32 Kword F0000h 08000h 07FFFh 16 Kword 04000h 03FFFh Total of 31 32 Kword blocks 4 Kword 03000h 02FFFh 0FFFFh 32 Kword 4 Kword 02000h 01FFFh 08000h 07FFFh 32 Kword 8 Kword 00000h 00000h PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 8 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B General Description Figure 4: Block Addresses, M29F800 (x8) Top Boot Block Addresses (x8) Bottom Boot Block Addresses (x8) FFFFFh FFFFFh 16 KByte 64 KByte FC000h FBFFFh F0000h EFFFFh 8 KByte 64 KByte FA000h F9FFFh E0000h Total of 15 64 KByte Blocks 8 KByte F8000h F7FFFh 32 KByte F0000h EFFFFh 1FFFFh 64 KByte 64 KByte E0000h 10000h 0FFFFh 32 KByte 08000h 07FFFh Total of 15 8 KByte 64 KByte Blocks 06000h 05FFFh 1FFFFh 64 KByte 8 KByte 10000h 0FFFFh 04000h 03FFFh 64 KByte 16 KByte 00000h 00000h PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 9 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B General Description Figure 5: Block Addresses, M29F800 (x16) Top boot block addresses (x16) Bottom boot block addresses (x16) 7FFFFh 7FFFFh 8 Kword 32 Kword 7E000h 7DFFFh 78000h 77FFFh 4 Kword 32 Kword 7D000h 7CFFFh 70000h Total of 15 32 Kword blocks 4 Kword 7C000h 7BFFFh 16 Kword 78000h 77FFFh 0FFFFh 32 Kword 32 Kword 70000h 08000h 07FFFh 16 Kword 04000h 03FFFh Total of 15 32 Kword blocks 4 Kword 03000h 02FFFh 0FFFFh 32 Kword 4 Kword 02000h 01FFFh 08000h 07FFFh 32 Kword 8 Kword 00000h 00000h PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 10 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B General Description Figure 6: Block Addresses, M29F400 (x8) Top boot block addresses (x8) 7FFFFh 7C000h FBFFFh 7A000h 79FFFh 78000h 77FFFh 70000h 6FFFFh Bottom boot block addresses (x8) 7FFFFh 16KB 70000h 6FFFFh 8KB 8KB Total of 7 64KB blocks 32KB 64KB 1FFFFh 10000h 0FFFFh 08000h 07FFFh Total of 7 64KB blocks 10000h 0FFFFh 06000h 05FFFh 64KB 04000h 03FFFh 64KB 64KB 32KB 8KB 8KB 16KB 00000h 00000h PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 64KB 60000h 60000h 1FFFFh 64KB 11 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B General Description Figure 7: Block Addresses, M29F400 (x16) Bottom boot block addresses (x16) Top boot block addresses (x16) 3FFFFh 3FFFFh 8 Kword 32 Kword 38000h 37FFFh 3E000h 3DFFFh 4 Kword 32 Kword 3D000h 3CFFFh 30000h Total of 7 32 Kword blocks 4 Kword 3C000h 3BFFFh 16 Kword 38000h 37FFFh 0FFFFh 32 Kword 32 Kword 30000h 08000h 07FFFh 16 Kword 04000h 03FFFh Total of 7 32 Kword blocks 4 Kword 03000h 02FFFh 0FFFFh 32 Kword 4 Kword 02000h 01FFFh 08000h 07FFFh 32 Kword 8 Kword 00000h 00000h PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 12 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B General Description Figure 8: Block Addresses, M29F200 (x8) Top boot block addresses (x8) Bottom boot block addresses (x8) 3FFFFh 2FFFFh 16KB 64KB 3C000h 3BFFFh 20000h 2FFFFh 8KB 64KB 3A000h 39FFFh 20000h Total of 3 64KB blocks 8KB 38000h 37FFFh 32KB 30000h 3FFFFh 1FFFFh 64KB 64KB 20000h 10000h 0FFFFh 32KB 08000h 07FFFh Total of 3 64KB blocks 8KB 06000h 05FFFh 1FFFFh 64KB 8KB 10000h 0FFFFh 04000h 03FFFh 64KB 16KB 00000h 00000h PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 13 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B General Description Figure 9: Block Addresses, M29F200 (x16) Top boot block addresses (x16) Bottom boot block addresses (x16) 1FFFFh 1FFFFh 8 Kword 32 Kword 1E000h 1DFFFh 18000h 17FFFh 4 Kword 32 Kword 1D000h 3CFFFh 10000h Total of 3 32 Kword blocks 4 Kword 1C000h 3BFFFh 16 Kword 18000h 17FFFh 0FFFFh 32 Kword 32 Kword 10000h 08000h 07FFFh 16 Kword 04000h 03FFFh Total of 3 32 Kword blocks 4 Kword 03000h 02FFFh 0FFFFh 32 Kword 4 Kword 08000h 07FFFh 02000h 01FFFh 32 Kword 8 Kword 00000h 00000h PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 14 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Signal Assignments Signal Assignments TSOP Pin Assignments Figure 10: M29F160F A15 A14 A13 A12 A11 A10 A9 A8 A19 NC WE# RP# NC NC R/B# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 12 13 37 36 24 25 A16 BYTE# VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 AI06850_160 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 15 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Signal Assignments Figure 11: M29F800F A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RP# NC NC R/B# A18 A17 A7 A6 A5 A4 A3 A2 A1 1 48 12 13 37 36 24 25 A16 BYTE# VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 AI06850_800 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 16 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Signal Assignments Figure 12: M29F400F A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RP# NC NC R/B# NC A17 A7 A6 A5 A4 A3 A2 A1 1 48 12 13 37 36 24 25 A16 BYTE# VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 AI06850_400 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 17 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Signal Assignments Figure 13: M29F200F A15 A14 A13 A12 A11 A10 A9 A8 NC NC WE# RP# NC NC R/B# NC NC A7 A6 A5 A4 A3 A2 A1 1 48 12 13 37 36 24 25 A16 BYTE# VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 DQ5 DQ12 DQ4 VCC DQ11 DQ3 DQ10 DQ2 DQ9 DQ1 DQ8 DQ0 OE# VSS CE# A0 AI06850_400 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 18 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Signal Assignments Small-Outline Pin Assignments Figure 14: M29F800 R/B# A18 A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 44 11 12 34 33 RP# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 23 22 DQ5 DQ12 DQ4 VCC AI02906_800 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 19 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Signal Assignments Figure 15: M29F400 NC R/B# A17 A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 1 44 11 12 34 33 RP# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 23 22 20 DQ5 DQ12 DQ4 VCC AI02906_400 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Signal Assignments Figure 16: M29F200 NC R/B# NC A7 A6 A5 A4 A3 A2 A1 A0 CE# VSS OE# DQ0 DQ8 DQ1 DQ9 DQ2 DQ10 DQ3 DQ11 1 44 11 12 34 33 RP# WE# A8 A9 A10 A11 A12 A13 A14 A15 A16 BYTE# VSS DQ15A–1 DQ7 DQ14 DQ6 DQ13 23 22 DQ5 DQ12 DQ4 VCC AI02906_200 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 21 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Signal Descriptions Signal Descriptions The signal description table below is a comprehensive list of signals for this device family. All signals listed may not be supported on this device. See Signal Assignments for information specific to this device. Table 2: Signal Descriptions Name Type Description A[MAX:0] Input Address: Selects the cells in the array to access during READ operations. During WRITE operations, they control the commands sent to the command interface of the program/erase controller. CE# Input Chip enable: Activates the device, enabling READ and WRITE operations to be performed. When CE# is HIGH, all other pins are ignored. OE# Input Output enable: Controls the bus READ operation. WE# Input Write enable: Controls the bus WRITE operation of the command interface. BYTE# Input Byte/word organization select: Switches between x8 and x16 bus modes. When BYTE# is LOW, the device is in x8 mode; when HIGH, the device is in x16 mode. RST# Input Reset: Applies a hardware reset to the device, which is achieved by holding RST# LOW for at least tPLPX. After RST# goes HIGH, the device is ready for READ and WRITE operations (after tPHEL or tRHEL, whichever occurs last). Holding RST# at VID will temporarily unprotect the protected blocks. PROGRAM and ERASE operations on all blocks will then be possible. The transition from VIH to VID must be slower than tPHPHH. DQ[7:0] I/O Data I/O: Outputs the data stored at the selected address during a READ operation. During WRITE operations, they represent the commands sent to the command interface of the program/erase controller. DQ[14:8] I/O Data I/O: Outputs the data stored at the selected address during a READ operation when BYTE# is HIGH. When BYTE# is LOW, these pins are not used and are High-Z. During WRITE operations, these bits are not used. When reading the status register, these bits should be ignored. DQ15/A-1 I/O Data I/O or address input: When the device operates in x16 bus mode, this pin behaves as data I/O, together with DQ[14:8]. When the device operates in x8 bus mode, this pin behaves as the least significant bit of the address. Except where stated explicitly otherwise, DQ15 = data I/O (x16 mode); A-1 = address input (x8 mode). RY/BY# Output Ready busy: Open-drain output that can be used to identify when the device is performing a PROGRAM or ERASE operation. During PROGRAM or ERASE operations, RY/BY# is LOW, and is High-Z during read mode, auto select mode, and erase suspend mode. After a hardware reset, READ and WRITE operations cannot begin until RY/BY# goes High-Z (see RESET AC Specifications for more details). The use of an open-drain output enables the RY/BY# pins from several devices to be connected to a single pull-up resistor to VCCQ. A low value will then indicate that one (or more) of the devices is (are) busy. PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 22 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Signal Descriptions Table 2: Signal Descriptions (Continued) Name Type VCC Supply Supply voltage: Provides the power supply for READ, PROGRAM, and ERASE operations. The command interface is disabled when VCC < VLKO. This prevents WRITE operations from accidentally damaging the data during power-up, power-down, and power surges. If the program/erase controller is programming or erasing during this time, then the operation aborts and the contents being altered will be invalid. A 0.1μF capacitor should be connected between VCC and VSS to decouple the current surges from the power supply. The PCB track widths must be sufficient to carry the currents required during PROGRAM and ERASE operations (see DC Characteristics). VSS Supply Ground: Reference for all voltage measurements. All VSS pins must be connected to the system ground. NC – PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN Description Not connected: Not connected internally. 23 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Bus Operations Bus Operations Table 3: Bus Operations Notes 1 through 2 apply to entire table 8-Bit Mode 16-Bit Mode CE# OE# WE# A[MAX:0], DQ15/A-1 DQ[14:8] DQ[7:0] A[MAX:0] DQ15/A-1, DQ[14:0] READ L L H Cell address High-Z Data output Cell address Data output WRITE L H L Command address High-Z Data input Command address Data input OUTPUT DISABLE X H H X High-Z High-Z X High-Z STANDBY H X X X High-Z High-Z X High-Z Operation 1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW. 2. Typically glitches of less than 5ns on Chip Enable or Write Enable are ignored by the memory and do not affect bus operations. Notes: Read Bus READ operations read from the memory cells or specific registers in the command interface. A valid bus READ operation involves setting the desired address on the address inputs, taking CE# and OE# LOW, and holding WE# HIGH. The data I/Os will output the value. (See AC Characteristics for details about when the output becomes valid.) Write Bus WRITE operations write to the command interface. A valid bus WRITE operation begins by setting the desired address on the address inputs. The address inputs are latched by the command interface on the falling edge of CE# or WE#, whichever occurs last. The data I/Os are latched by the command interface on the rising edge of CE# or WE#, whichever occurs first. OE# must remain HIGH during the entire bus WRITE operation. (See AC Characteristics for timing requirement details.) Output Disable Data I/Os are High-Z when OE# is HIGH. Standby When CE# is HIGH, the device enters standby, and data I/Os are High-Z. To reduce the supply current to the standby supply current (ICC2), CE# must be held within V CC ±0.2V. (See DC Characteristics.) During PROGRAM or ERASE operations the device will continue to use the program/erase supply current (ICC3) until the operation completes. Automatic Standby If CMOS levels (VCC ±0.2V) are used to drive the bus, and the bus is inactive for 150ns or more, the device enters automatic standby, and the internal supply current is reduced to that of the standby supply current, ICC2. The data I/Os will output data if a READ operation is in progress. PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 24 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Command Interface Command Interface All WRITE operations are interpreted by the command interface. Commands consist of one or more sequential WRITE operations. Failure to observe a valid sequence will result in the memory returning to read mode. The long command sequences are imposed to maximize data security. The address used for the commands changes depending on whether the memory is in 16-bit or 8-bit mode. READ/RESET Command The READ/RESET command returns the device to read mode, where it behaves like a ROM or EPROM, unless otherwise stated. It also resets the errors in the status register. Either one or three WRITE operations can be used to issue the READ/RESET command. The READ/RESET command can be issued, between WRITE cycles, before the start of a PROGRAM or ERASE operation, to return the device to read mode. Once the PROGRAM or ERASE operation has started, the READ/RESET command is no longer accepted. The READ/RESET command will not abort an ERASE operation when issued while in erase suspend. AUTO SELECT Command The AUTO SELECT command is used to read the electronic signature, including the manufacturer code, the device code and the block protection status. Three consecutive WRITE operations are required to issue the AUTO SELECT command. Once the command is issued, the memory remains in auto select mode until a READ/RESET command is issued. READ CFI QUERY and READ/RESET commands are accepted in auto Select mode, while all other commands are ignored. Note: These operations are intended for use by programming equipment and are not typically used in applications. They require V ID to be applied to some of the pins. From the auto select mode the manufacturer code can be read using a READ operation with A0 = V IL and A1 = V IL. The other address bits may be set to either V IL or V IH. The manufacturer code for Micron is 0001h. The device code can be read using a READ operation with A0 = V IH and A1 = V IL. The other address bits may be set to either V IL or V IH. The block protection status of each block can be read using a READ operation with A0 = VIL, A1 = V IH, and A12-A19 specifying the address of the block. The other address bits may be set to either V IL or V IH. If the addressed block is protected then 01h is output on Data Inputs/Outputs DQ0-DQ7, otherwise 00h is output. See Block Protection Operations for information on the block protection status; the Programmer Technique Block Protection table includes block protection bus READ information. PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 25 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Command Interface Table 4: Read Electronic Signature Notes 1 applies to entire table. 8-Bit Mode Operation CE# OE# WE# A[MAX:0], DQ15/A-1 16-Bit Mode DQ[14:8] DQ[7:0] A[MAX:0] DQ15/A-1, DQ[14:0] READ MANUFACTURER CODE L L H A0 = VIL, A1 = VIL, A9 = VID, Others = VIL/VID High-Z 0x01 A0 = VIL, A1 = VIL, A9 = VID, Others = VIL/VID 0x0001 READ DEVICE CODE L L H A0 = VIH, A1 = VIL, A9 = VID, Others = VIL/VIH High-Z 0x51 (M29F200FT) 0x57 (M29F200FB) 0x23 (M29F400FT) 0xAB(M29F400FB) 0xD6 (M29F800FT) 0x58 (M29F800FB) 0xD2 (M29F160FT) 0xD8 (M29F160FB) A0 = VIH, A1 = VIL, A9 = VID, Others = VIL/VIH 0x2251 (M29F200FT) 0x2257 (M29F200FB) 0x2223 (M29F400FT) 0x22AB (M29F400FB) 0x22D6 (M29F800FT) 0x2258 (M29F800FB) 0x22D2 (M29F160FT) 0x22D8(M29F160FB) 1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW. Note: PROGRAM Command The PROGRAM command can be used to program a value to one address at a time. The command requires four bus WRITE operations. The final WRITE operation latches the address and data, and starts the program/erase controller. If the address falls in a protected block, then the PROGRAM command is ignored, the data remains unchanged. The status register is never read and no error condition is given. During the PROGRAM operation, the memory will ignore all commands. It is not possible to issue any command to abort or pause the operation. Typical program times are given in READ CFI QUERY Command. READ operations during the PROGRAM operation will output the status register on the data I/Os. (See Registers.) After the PROGRAM operation has completed, the memory returns to read mode, unless an error has occurred. When an error occurs, the memory continues to output the status register. A READ/RESET command must be issued to reset the error condition and return to read mode. Note that the PROGRAM command cannot change a bit set at 0 back to 1. One of the ERASE commands must be used to set all the bits in a block, or in the whole device, from 0 to 1. UNLOCK BYPASS Command The UNLOCK BYPASS command is used in conjunction with the UNLOCK BYPASS PROGRAM command to program the memory. When the access time to the device is long (as with some EPROM programmers), considerable time saving can be made by using these commands. Three WRITE operations are required to issue the UNLOCK BYPASS command. PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 26 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Command Interface Once the UNLOCK BYPASS command has been issued, the memory will only accept the UNLOCK BYPASS PROGRAM command and the UNLOCK BYPASS RESET command. The memory can be read as though in read mode. UNLOCK BYPASS PROGRAM Command The UNLOCK BYPASS PROGRAM command can be used to program one address in memory at a time. The command requires two WRITE operations, the final write operation latches the address and data, and starts the program/erase controller. The PROGRAM operation using the UNLOCK BYPASS PROGRAM command behaves identically to the PROGRAM operation using the PROGRAM command. A protected block cannot be programmed; the operation cannot be aborted and the status register is read. Errors must be reset using the READ/RESET command, which leaves the device in unlock bypass mode. (See the PROGRAM command for details.) UNLOCK BYPASS RESET Command The UNLOCK BYPASS RESET command can be used to return to read/reset mode from unlock bypass mode. Two WRITE operations are required to issue the UNLOCK BYPASS RESET command. The READ/RESET command does not exit from unlock bypass mode. CHIP ERASE Command The CHIP ERASE command can be used to erase the entire chip. Six WRITE operations are required to issue the CHIP ERASE command and start the program/erase controller. If any blocks are protected then these are ignored and all the other blocks are erased. If all of the blocks are protected, the CHIP ERASE operation appears to start but will terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored. During an ERASE operation, the memory will ignore all commands. It is not possible to issue any command to abort the operation. Typical chip erase times are given in READ CFI QUERY Command. All READ operations during the CHIP ERASE operation will output the status register on the data I/Os. (See Registers for more details.) After the CHIP ERASE operation has completed, the memory will return to read mode, unless an error has occurred. When an error occurs, the memory will continue to output the status register. A READ/RESET command must be issued to reset the error condition and return to read mode. The CHIP ERASE command sets all of the bits in unprotected blocks to 1. All previous data is lost. BLOCK ERASE Command The BLOCK ERASE command can be used to erase a list of one or more blocks. Six WRITE operations are required to select the first block in the list. Each additional block in the list can be selected by repeating the sixth WRITE operation, using the address of the additional block. The BLOCK ERASE operation starts the program/erase controller about 50µs after the last WRITE operation. Once the program/erase controller starts, it is not possible to select any more blocks. Each additional block must therefore be selected within 50µs of the last block. The 50µs timer restarts when an additional block is selected. The status register can be read after the sixth WRITE operation. See Status Regis- PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 27 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Command Interface ter for details on how to identify whether the program/erase controller has started the BLOCK ERASE operation. If any selected blocks are protected, then these are ignored and all the other selected blocks are erased. If all of the selected blocks are protected, the BLOCK ERASE operation appears to start but will terminate within about 100µs, leaving the data unchanged. No error condition is given when protected blocks are ignored. During the BLOCK ERASE operation, the device will ignore all commands except the ERASE SUSPEND command. All READ operations during the BLOCK ERASE operation will output the status register on the data I/Os. After the BLOCK ERASE operation has completed, the device will return to read mode, unless an error has occurred. When an error occurs, the device will continue to output the status register. A READ/RESET command must be issued to reset the error condition and return to read mode. The BLOCK ERASE command sets all of the bits in the unprotected selected blocks to 1. All previous data in the selected blocks is lost. ERASE SUSPEND Command The ERASE SUSPEND command may be used to temporarily suspend a BLOCK ERASE operation and return the device to read mode. The command requires one WRITE operation. The program/erase controller will suspend within the erase suspend latency time of the ERASE SUSPEND command being issued. Once the program/erase controller has stopped, the device will be set to read mode and the erase will be suspended. If the ERASE SUSPEND command is issued during the period when the device is waiting for an additional block (before the program/erase controller starts), then the erase is suspended immediately and will start immediately when the ERASE SUSPEND command is issued. It is not possible to select any further blocks to erase after the erase resume. During erase suspend, it is possible to read and program cells in blocks that are not being erased; both READ and PROGRAM operations behave as normal on these blocks. If any attempt is made to program in a protected block or in the suspended block then the PROGRAM command is ignored and the data remains unchanged. The status register is not read and no error condition is given. Reading from blocks that are being erased will output the status register. It is also possible to issue the AUTO SELECT, READ CFI QUERY, and UNLOCK BYPASS commands during an erase suspend. The READ/RESET command must be issued to return the device to read array mode before the RESUME command will be accepted. ERASE RESUME Command The ERASE RESUME command must be used to restart the program/erase controller from erase suspend. An erase can be suspended and resumed more than once. READ CFI QUERY Command The READ CFI QUERY command reads data from the CFI. This command is valid when the device is in read array mode, or when the device is in auto select mode. One WRITE cycle is required to issue the READ CFI QUERY command. Once the command is issued, subsequent READ operations then read from the CFI. The READ/RESET command PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 28 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Command Interface must be issued to return the device to the previous mode (read array or auto select mode). A second READ/RESET command would be needed if the device is to be placed in read array from auto select mode. 16-Bit Mode Commands Table 5: 16-Bit Mode Commands (BYTE# = HIGH) WRITE Operations 1st Command Length Addr READ/RESET 2nd Data 3rd 4th Addr Data Addr Data 5th Addr Data PA PD 6th Addr Data Addr Data 1 X F0 3 555 AA 2AA 55 X F0 AUTO SELECT 3 555 AA 2AA 55 555 90 PROGRAM 4 555 AA 2AA 55 555 A0 UNLOCK BYPASS 3 555 AA 2AA 55 555 20 UNLOCK BYPASS PROGRAM 2 X A0 PA PD UNLOCK BYPASS RESET 2 X 90 X 00 CHIP ERASE 6 555 AA 2AA 55 555 80 555 AA 2AA 55 555 10 BLOCK ERASE 2AA 55 555 80 555 AA 2AA 55 BA 30 6+ 555 AA ERASE SUSPEND 1 X B0 ERASE RESUME 1 X 30 READ CFI QUERY 1 55 98 Notes: PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 1. X = "Don’t Care;" PA = Program address; PD = Program data; BA = Any address in the block. All values in the table are in hexadecimal. 2. Command interface: Only uses A-1, A[10;0], and DQ[7;0] to verify the commands; A[19:11], DQ[14:8], and DQ15 are "Don’t Care." DQ15/A-1 is A-1 when BYTE is LOW or DQ15 when BYTE is HIGH. 3. Read/Reset: After a READ/RESET command, read the memory as normal until another command is issued. 4. Auto Select: After an AUTO SELECT command, read manufacturer ID, device ID, or block protection status. 5. Program, Unlock Bypass Program, Chip Erase, Block Erase: After issuing these commands, read the status register until the program/erase controller completes and the device returns to read mode. Add additional blocks during a BLOCK ERASE command with additional bus WRITE operations until the timeout bit is set. 6. Unlock Bypass: After the UNLOCK BYPASS command, issue an UNLOCK BYPASS PROGRAM or UNLOCK BYPASS RESET command. 7. Unlock Bypass Reset: After the UNLOCK BYPASS RESET command, read the memory as normal until another command is issued. 8. Erase Suspend: After the ERASE SUSPEND command, read non-erasing blocks as normal. Issue AUTO SELECT and PROGRAM commands on non-erasing blocks as normal. 9. Erase Resume: After the ERASE RESUME command, the suspended ERASE operation resumes. Read the status register until the program/erase controller completes and the device returns to read mode. 29 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Command Interface 10. CFI Query: Command is valid when device is ready to read array data or when device is in auto select mode. 8-Bit Mode Commands Table 6: 8-Bit Mode Commands (BYTE# = LOW) WRITE Operations 1st Command Length Addr READ/RESET 2nd Data 3rd 4th Addr Data Addr Data F0 5th Addr Data PA PD 6th Addr Data Addr Data 1 X F0 3 AAA AA 555 55 X AUTO SELECT 3 AAA AA 555 55 AAA 90 PROGRAM 4 AAA AA 555 55 AAA A0 UNLOCK BYPASS 3 AAA AA 555 55 AAA 20 UNLOCK BYPASS PROGRAM 2 X A0 PA PD UNLOCK BYPASS RESET 2 X 90 X 00 CHIP ERASE 6 AAA AA 555 55 AAA 80 AAA AA 555 55 AAA 10 BLOCK ERASE 6+ AAA AA 555 55 AAA 80 AAA AA 555 55 BA 30 ERASE SUSPEND 1 X B0 ERASE RESUME 1 X 30 READ CFI QUERY 1 AA 98 Notes: PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 1. X = "Don’t Care;" PA = Program address; PD = Program data; BA = Any address in the block. All values in the table are in hexadecimal. 2. Command interface: Only uses A-1, A[10;0], and DQ[7;0] to verify the commands; A[19:11], DQ[14:8], and DQ15 are "Don’t Care." DQ15/A-1 is A-1 when BYTE is LOW or DQ15 when BYTE is HIGH. 3. Read/Reset: After a READ/RESET command, read the memory as normal until another command is issued. 4. Auto Select: After an AUTO SELECT command, read manufacturer ID, device ID, or block protection status. 5. Program, Unlock Bypass Program, Chip Erase, Block Erase: After issuing these commands, read the status register until the program/erase controller completes and the device returns to read mode. Add additional blocks during a BLOCK ERASE command with additional bus WRITE operations until the timeout bit is set. 6. Unlock Bypass: After the UNLOCK BYPASS command, issue an UNLOCK BYPASS PROGRAM or UNLOCK BYPASS RESET command. 7. Unlock Bypass Reset: After the UNLOCK BYPASS RESET command, read the memory as normal until another command is issued. 8. Erase Suspend: After the ERASE SUSPEND command, read non-erasing blocks as normal. Issue AUTO SELECT and PROGRAM commands on non-erasing blocks as normal. 9. Erase Resume: After the ERASE RESUME command, the suspended ERASE operation resumes. Read the status register until the program/erase controller completes and the device returns to read mode. 10. CFI Query: Command is valid when device is ready to read array data or when device is in auto select mode. 30 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Block Protection Operations Block Protection Operations Block protection can be used to prevent any operation from modifying the data stored in the Flash memory. Each Block can be protected individually. Once protected, Program and Erase operations on the block fail to change the data. Block protection status of the device is read using the AUTO SELECT command. Two techniques for controlling block protection are explained here: Programmer technique and In-System technique. Note: A third technique for controlling block protection, Temporary Unprotection, is described in the Signal Descriptions table, RP pin (Reset/Block Temporary Unprotection). Unlike the Command Interface of the Program/Erase Controller, the techniques for protecting and unprotecting blocks could change between different Flash memory suppliers. Table 7: Block and Chip Protection Signal Settings Signals Block Protect Chip Unprotect Verify Block Protection Verify Block Unprotect L VID L L CE# OE# VID VID L L WE# L pulse L pulse H H X Block base address Block base address Address Input, 8-Bit and 16-Bit A[MAX:16] Block base address A15 H A14 X A13 X A12 H A11 X X X X A10 X X X X A9 VID VID VID VID A8 X X X X A7 X X X X A6 X X L H A5 X X X X A4 X X X X A3 X X X X A2 X X X X A1 X X H H A0 X X L L Data I/O, 8-Bit and 16-Bit PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 31 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Block Protection Operations Table 7: Block and Chip Protection Signal Settings (Continued) Signals Block Protect Chip Unprotect Verify Block Protection Verify Block Unprotect X X Pass = XX01h Retry = XX01h X X Retry = XX00h Pass = XX00h DQ[15]/A-1, and DQ[14:0] Note: 1. H = Logic level HIGH (VIH); L = Logic level LOW (VIL); X = HIGH or LOW. Programmer Technique The Programmer technique uses high (VID) voltage levels on some of the bus pins. These cannot be achieved using a standard microprocessor bus, therefore the technique is recommended only for use in Programming Equipment. To protect a block, follow the Programmer Equipment Block Protect flowchart. During the Block Protect algorithm, the A19-A12 Address Inputs indicate the address of the block to be protected. The block will be correctly protected only if A19-A12 remain valid and stable, and if Chip Enable is kept Low, V IL, all along the Protect and Verify phases. The Chip Unprotect algorithm is used to unprotect all the memory blocks at the same time. This algorithm can only be used if all of the blocks are protected first. To unprotect the chip follow the Programmer Equipment Chip Unprotect flowchart and the Programmer Technique Block Protection table, which give a summary of each operation. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. Figure 17: Block Protect Flowchart – Programmer Equipment Protect Setup Verify OE#, A9 = VID , CE# = V IL A0, A6 = VIL , A1 = VIH START End DATA = 01h No Yes Wait 4µs CE# = VIL ADDRESS = BLOCK ADDRESS WE# = VIH CE#, OE# =,VIH WE# = VIL A9 = VIH CE#, OE# = V IH ++n = 25 Yes Wait 4µs PASS Wait 100µs OE# = VIL n=0 WE# = VIH Wait 60ns No A9 = VIH CE#, OE# = VIH FAIL Read DATA PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 32 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Block Protection Operations Figure 18: Chip Unprotect Flowchart – Programmer Equipment START Set-up PROTECT ALL BLOCKS n=0 CURRENT BLOCK = 0 A6, A12, A15 = V IH CE#, OE#, A9 = V ID Unprotect Wait 4µs WE# = V IL Wait 10ms WE# = V IH CE#, OE# = V IH ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL , A1, A6 = V IH CE# = VIL Wait 4µs OE# = VIL INCREMENT CURRENT BLOCK Verify Wait 60ns Read DATA NO NO DATA = 00h LAST ++n YES YES End NO BLOCK = 1000 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN YES A9 = VIH CE#, OE# = V IH A9 = VIH CE#, OE# = V IH FAIL PASS 33 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Block Protection Operations 1. Address Inputs A[9:12] give the address of the block that is to be protected. It is imperative that they remain stable during the operation. 2. During the protect and verify phases of the algorithm, CE# must be kept LOW. Notes: In-System Technique The In-System technique requires a high voltage level on the Reset/Blocks Temporary Unprotect pin, RP. This can be achieved without violating the maximum ratings of the components on the microprocessor bus, therefore this technique is suitable for use after the Flash memory has been fitted to the system. To protect a block follow the In-System Equipment Block Protect flowchart . To unprotect the whole chip it is necessary to protect all of the blocks first, then all the blocks can be unprotected at the same time. To unprotect the chip follow the In-System Equipment Chip Unprotect flowchart. The timing on these flowcharts is critical. Care should be taken to ensure that, where a pause is specified, it is followed as closely as possible. Do not allow the microprocessor to service interrupts that will upset the timing and do not abort the procedure before reaching the end. Chip Unprotect can take several seconds and a user message should be provided to show that the operation is progressing. Figure 19: Block Protect Flowchart – In-System Equipment Setup START Protect n=0 A0 = VIL , A1 = VIH , A6 = VIL End DATA = 01h No Yes Wait 100µs RST# = VID WRITE 60h ADDRESS = BLOCK ADDRESS WRITE 60h ADDRESS = BLOCK ADDRESS A0 = VIL , A1 = VIH , A6 = VIL Verify RST# = VIH ISSUE READ/RESET WRITE 40h ADDRESS = BLOCK ADDRESS A0 = VIL , A1 = VIH , A6 = VIL COMMAND PASS ++n = 25 No Yes RST# = VIH ISSUE READ/RESET COMMAND Wait 4µs FAIL READ DATA ADDRESS = BLOCK ADDRESS A0 = VIL , A1 = VIH , A6 = VIL PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 34 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Block Protection Operations Figure 20: Chip Protection Flowchart – In-System Equipment START PROTECT ALL BLOCKS Set-up n=0 CURRENT BLOCK = 0 RST# = VID WRITE 60h ANY ADDRESS WITH A0 = VIL , A1 = VIH , A6 = VIH WRITE 60h Unprotect ANY ADDRESS WITH A0 = VIL , A1 = VIH , A6 = VIH Wait 10ms WRITE 40h Verify ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL , A1 = VIH , A6 = VIH Wait 4µs INCREMENT CURRENT BLOCK READ DATA ADDRESS = CURRENT BLOCK ADDRESS A0 = VIL , A1 = VIH , A6 = VIH NO End NO DATA = 00h ++n LAST = 1000 BLOCK YES NO YES RST# = VIH RST# = VIH ISSUE READ/RESET COMMAND ISSUE READ/RESET COMMAND PASS FAIL PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN YES 35 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Status Register Status Register Bus Read operations from any address always read the Status Register during Program and Erase operations. It is also read during Erase Suspend when an address within a block being erased is accessed. Table 8: Status Register Bits Address DQ7 DQ6 DQ5 DQ3 DQ2 RB# Program Operation Any Address DQ7# Toggle 0 – – 0 Program During Erase Suspend Any Address DQ7# Toggle 0 – – 0 Program Error Any Address DQ7# Toggle 1 – – 0 Chip Erase Any Address 0 Toggle 0 1 Toggle 0 Block Erase before timeErasing Block out Non-Erasing Block 0 Toggle 0 0 Toggle 0 0 Toggle 0 0 No Toggle 0 Block Erase Erasing Block 0 Toggle 0 1 Toggle 0 Non-Erasing Block 0 Toggle 0 1 No Toggle 0 Erasing Block 1 No Toggle 0 – Toggle 1 Erase Suspend Non-Erasing Block Erase Error Data read as normal 1 Good Block Address 0 Toggle 1 1 No Toggle 0 Faulty Block Address 0 Toggle 1 1 Toggle 0 Note: 1. Unspecified data bits should be ignored. Data Polling Bit The Data Polling Bit (DQ7) can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Data Polling Bit is output on DQ7 when the Status Register is read. During Program operations the Data Polling Bit outputs the complement of the bit being programmed to DQ7. After successful completion of the Program operation the memory returns to Read mode and Bus Read operations from the address just programmed output DQ7, not its complement. During Erase operations the Data Polling Bit outputs ’0’, the complement of the erased state of DQ7. After successful completion of the Erase operation the memory returns to Read Mode. In Erase Suspend mode the Data Polling Bit will output a ’1’ during a Bus Read operation within a block being erased. The Data Polling Bit will change from a ’0’ to a ’1’ when the Program/Erase Controller has suspended the Erase operation. The Data Polling Flowchart, gives an example of how to use the Data Polling Bit. A Valid Address is the address being programmed or an address within the block being erased. PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 36 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Status Register Figure 21: Data Polling Flowchart Start Read DQ5 and DQ7 at valid address DQ7 = data Yes No No DQ5 =1 Yes Read DQ7 at valid address DQ7 = data Yes No Fail Pass AI03598 Toggle Bit The Toggle Bit (DQ6) can be used to identify whether the Program/Erase Controller has successfully completed its operation or if it has responded to an Erase Suspend. The Toggle Bit is output on DQ6 when the Status Register is read. During Program and Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with successive Bus Read operations at any address. After successful completion of the operation the memory returns to Read mode. During Erase Suspend mode the Toggle Bit will output when addressing a cell within a block being erased. The Toggle Bit will stop toggling when the Program/Erase Controller has suspended the Erase operation. If any attempt is made to erase a protected block, the operation is aborted, no error is signalled and DQ6 toggles for approximately 100µs. If any attempt is made to program a protected block or a suspended block, the operation is aborted, no error is signalled and DQ6 toggles for approximately 1µs. The Data Toggle Flowchart, gives an example of how to use the Data Toggle Bit. PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 37 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Status Register Figure 22: Data Toggle Flowchart Start Read DQ6 Read DQ5 and DQ6 DQ6 = toggle No Yes No DQ5 = 1 Yes Read DQ6 twice DQ6 = toggle No Yes Fail Pass AI01370C Error Bit The Error Bit (DQ5) can be used to identify errors detected by the Program/Erase Controller. The Error Bit is set to ’1’ when a Program, Block Erase or Chip Erase operation fails to write the correct data to the memory. If the Error Bit is set a Read/Reset command must be issued before other commands are issued. The Error bit is output on DQ5 when the Status Register is read. Note that the Program command cannot change a bit set to ’0’ back to ’1’ and attempting to do so will set DQ5 to ‘1’. A Bus Read operation to that address will show the bit is still ‘0’. One of the Erase commands must be used to set all the bits in a block or in the whole memory from ’0’ to ’1’ Erase Timer Bit The Erase Timer Bit (DQ3) can be used to identify the start of Program/Erase Controller operation during a Block Erase command. Once the Program/Erase Controller starts erasing the Erase Timer Bit is set to ’1’. Before the Program/Erase Controller starts the Erase Timer Bit is set to ’0’ and additional blocks to be erased may be written to the Command Interface. The Erase Timer Bit is output on DQ3 when the Status Register is read. PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 38 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Status Register Alternative Toggle Bit The Alternative Toggle Bit (DQ2) can be used to monitor the Program/Erase controller during Erase operations. The Alternative Toggle Bit is output on DQ2 when the Status Register is read. During Chip Erase and Block Erase operations the Toggle Bit changes from ’0’ to ’1’ to ’0’, etc., with successive Bus Read operations from addresses within the blocks being erased. A protected block is treated the same as a block not being erased. Once the operation completes the memory returns to Read mode. During Erase Suspend the Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read operations from addresses within the blocks being erased. Bus Read operations to addresses within blocks not being erased will output the memory cell data as if in Read mode. After an Erase operation that causes the Error Bit to be set the Alternative Toggle Bit can be used to identify which block or blocks have caused the error. The Alternative Toggle Bit changes from ’0’ to ’1’ to ’0’, etc. with successive Bus Read Operations from addresses within blocks that have not erased correctly. The Alternative Toggle Bit does not change if the addressed block has erased correctly. PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 39 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Common Flash Interface (CFI) Common Flash Interface (CFI) The Common Flash Interface is a JEDEC approved, standardized data structure that can be read from the Flash memory device. It allows a system software to query the device to determine various electrical and timing parameters, density information and functions supported by the memory. The system can interface easily with the device, enabling the software to upgrade itself when necessary. When the CFI Query Command is issued the device enters CFI Query mode and the data structure is read from the memory. Addresses used to retrieve the data are shown in the following tables: The CFI data structure also contains a security area where a 64-bit unique security number is written. This area can be accessed only in Read mode by the final user. It is impossible to change the security number after it has been written by Micron. Issue a Read command to return to Read mode. Table 9: Query Structure Overview Address x16 x8 Sub-section Name Description 10h 20h CFI Query Identification String Command set ID and algorithm data offset 1Bh 36h System Interface Information Device timing & voltage information 27h 4Eh Device Geometry Definition Flash device layout 40h 80h Primary Algorithm-specific Extended Query table Additional information specific to the Primary Algorithm (optional) 61h C2h Security Code Area 64 bit unique device number Note: 1. Query data are always presented on the lowest order data outputs. Table 10: CFI Query Identification String Address x16 x8 Data 10h 20h 0051h 11h 22h 0052h 12h 24h 0059h 13h 26h 0002h 14h 28h 0000h 15h 2Ah 0040h 16h 2Ch 0000h 17h 2Eh 0000h 18h 30h 19h 1Ah Description Value "Q" Query Unique ASCII String "QRY" "R" "Y" Primary Algorithm Command Set and Control Interface ID code 16 bit ID code defining a specific algorithm AMD Compatible Address for Primary Algorithm extended Query table (see the Device Geometry table.) P = 40h NA 0000h Alternate Vendor Command Set and Control Interface ID Code second vendor - specified algorithm supported 32h 0000h Address for Alternate Algorithm extended Query table NA 34h 0000h Note: PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 1. Query data are always presented on the lowest order data outputs (DQ7-DQ0) only. DQ8-DQ15 are ‘0’. 40 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Common Flash Interface (CFI) Table 11: CFI Query System Interface Information Address x16 x8 Data Description 1Bh 36h 0045h VCC Logic Supply Minimum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 4.5V 1Ch 38h 0055h VCC Logic Supply Maximum Program/Erase voltage bit 7 to 4 BCD value in volts bit 3 to 0 BCD value in 100 mV 5.5V 1Dh 3Ah 0000h VPP [Programming] Supply Minimum Program/Erase voltage NA 1Eh 3Ch 0000h VPP [Programming] Supply Maximum Program/Erase voltage NA 1Fh 20h 3Eh 0003h 40h 0000h Value Typical timeout per single Byte/Word program = 2n µs Typical timeout for minimum size write buffer program = 2n 8µs 2n 21h 42h 000Ah Typical timeout per individual block erase = 22h 44h 0000h Typical timeout for full chip erase = 2n ms 23h 46h 0004h Maximum timeout for Byte/Word program = 2n times typical 24h 48h 0000h Maximum timeout for write buffer program = µs ms NA 1s NA 2n times typical 2n 25h 4Ah 0003h Maximum timeout per individual block erase = 26h 4Ch 0000h Maximum timeout for chip erase = 2n times typical times typical 256µs NA 8s NA Table 12: Device Geometry Definition Address x16 27h x8 4Eh Data 0015h Description Device Size = Value 2n in number of Bytes 2MB 0014h 1MB 0013h 512KB 0012h 256KB 28h 29h 50h 52h 0002h 0000h Flash Device Interface Code description 2Ah 2Bh 54h 56h 0000h 0000h Maximum number of Bytes in multi-Byte program or page = 2n NA 2Ch 58h 0004h Number of Erase Block Regions within the device. It specifies the number of regions within the device containing contiguous Erase Blocks of the same size. 4 2Dh 2Eh 5Ah 5Ch 0000h 0000h Region 1 Information Number of identical size erase block = 0000h+1 1 2Fh 30h 5Eh 60h 0040h 0000h Region 1 Information Block size in Region 1 = 0040h * 256 Byte 31h 32h 62h 64h 0001h 0000h Region 2 Information Number of identical size erase block = 0001h+1 33h 34h 66h 68h 0020h 0000h Region 2 Information Block size in Region 2 = 0020h * 256 Byte PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 41 x8, x16 Async. 16KB 2 8KB Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Common Flash Interface (CFI) Table 12: Device Geometry Definition (Continued) Address x16 x8 Data Description Value 35h 36h 6Ah 6Ch 0000h 0000h Region 3 Information Number of identical size erase block = 0000h+1 37h 38h 6Eh 70h 0080h 0000h Region 3 Information Block size in Region 3 = 0080h * 256 Byte 39h 3Ah 72h 74h 001Eh 0000h Region 4 Information (2 MByte) Number of identical-size erase block = 001Eh+1 31 39h 3Ah 72h 74h 000Eh 0000h Region 4 Information (1 MByte) Number of identical-size erase block = 000Eh+1 15 39h 3Ah 72h 74h 0006h 0000h Region 4 Information (512 KByte) Number of identical-size erase block = 0006h+1 7 39h 3Ah 72h 74h 0002h 0000h Region 4 Information (256 KByte) Number of identical-size erase block = 0002h+1 3 3Bh 3Ch 76h 78h 0000h 0001h Region 4 Information Block size in Region 4 = 0100h * 256 Byte 1 32KB 64KB Table 13: Primary Algorithm-Specific Extended Query Table Address x16 x8 Data Description 40h 80h 0050h Primary Algorithm extended Query table unique ASCII string “PRI” 41h 82h 0052h "R" 42h 84h 0049h "I" 43h 86h 0031h Major version number, ASCII "1" 44h 88h 0030h Minor version number, ASCII "0" 45h 8Ah 0000h Address Sensitive Unlock (bits 1 to 0) 00 = required, 01= not required Silicon Revision Number (bits 7 to 2) Yes 46h 8Ch 0002h Erase Suspend 00 = not supported, 01 = Read only, 02 = Read and Write 2 47h 8Eh 0001h Block Protection 00 = not supported, x = number of blocks in per group 1 48h 90h 0001h Temporary Block Unprotect 00 = not supported, 01 = supported Yes 49h 92h 0002h 0004h Block Protect /Unprotect 02 = M29F200 04 = M29F400 08 = M29F800 10 = M29F160 2 4 8 16 0008h Value "P" 0160h 4Ah 94h 0000h Simultaneous Operations, 00 = not supported No 4Bh 96h 0000h Burst Mode, 00 = not supported, 01 = supported No PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 42 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Common Flash Interface (CFI) Table 13: Primary Algorithm-Specific Extended Query Table (Continued) Address x16 x8 Data Description Value 4Ch 98h 0000h Page Mode, 00 = not supported, 01 = 4 page Word, 02 = 8 page Word No Table 14: Security Code Area Address x16 x8 Data Description 61h C3h, C2h XXXX 64 bit: unique device number 62h C5h, C4h XXXX 63h C7h, C6h XXXX 64h C9h, C8h XXXX PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 43 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Maximum Ratings and Operating Conditions Maximum Ratings and Operating Conditions Stressing the device above the rating listed in the Absolute Maximum Ratings table may cause permanent damage to the device. Exposure to Absolute Maximum Rating conditions for extended periods may affect device reliability. These are stress ratings only and operation of the device at these or any other conditions above those indicated in the Operating sections of this specification is not implied. Table 15: Absolute Maximum Ratings Symbol Parameter Min Max Unit TBIAS Temperature Under Bias –50 125 °C TSTG Storage Temperature –65 150 °C VIO Input or Output Voltage –0.6 VCC +0.6 V VCC Supply Voltage –0.6 6 V VID Identification Voltage –0.6 13.5 V Notes: 1. Input or Output Voltage parameter: Minimum voltage may undershoot to –2V during transition and for less than 20ns during transitions. 2. Input or Output Voltage parameter: Maximum voltage may overshoot to VCC +2V during transition and for less than 20ns during transitions. The parameters in the tables that follow, are derived from tests performed under the Measurement Conditions shown here. Designers should check that the operating conditions in their circuit match the operating conditions when relying on the quoted parameters. Table 16: Operating and AC Measurement Conditions Parameter Min Max Unit VCC Supply Voltage 4.5 5.5 V Ambient Operating Temperature –40 125 °C Load Capacitance (CL) 30 30 pF Input Rise and Fall Times — 5 ns 0 to VCC 0 to VCC V VCC/2 VCC/2 V Input Pulse Voltages Input and Output Timing Reference Voltages Figure 23: AC Measurement I/O Waveform VCC VCC/2 0V AI04498 PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 44 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Maximum Ratings and Operating Conditions Figure 24: AC Measurement Load Circuit V CC V CC 25k W Device under test 0.1 µ F CL 25k W C L includes JIG capacitance Table 17: Device Capacitance Symbol Parameter Test Condition CIN Input Capacitance COUT Output Capacitance Note: PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN Min Max Unit VIN = 0V 6 pF VOUT = 0V 12 pF 1. Sampled only, not 100% tested. 45 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B DC Electrical Specifications DC Electrical Specifications Table 18: DC Characteristics Symbol ILI Parameter Test Condition Min Typ Max Unit Input Leakage Current 0V ≤ VIN ≤ VCC — — ±1 µA ILO Output Leakage Current 0V ≤ VOUT ≤ VCC — — ±1 µA ICC1 Supply Current (Read) CE# = VIL, OE# = VIH, f = 6MHz — 7 20 mA ICC2 Supply Current (Standby) CE# = VCC ±0.2V, RP# = VCC ±0.2V — 60 120 µA ICC3 Supply Current (Program/Erase) Program/Erase Controller active — — 30 mA VIL Input Low Voltage – –0.5 — 0.8 V VIH Input High Voltage – 0.7VCC — VCC +0.3 V VOL Output Low Voltage IOL = 1.8mA — — 0.45 V VOH Output High Voltage IOH = –100µA VCC –0.4 — — V VID Identification Voltage 11.5 — 12.5 V IID Identification Current — — 100 µA 1.8 — 2.3 V VLKO Program/Erase Lockout Supply Voltage Note: PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN A9 = VID – 1. Supply Current (Program/Erase) parameter: Sampled only, not 100% tested. 46 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B AC Read Characteristics AC Read Characteristics Figure 25: Read Mode AC Waveforms tAVAV A[19:0]/ A–1 Valid tAVQV tAXQX CE# tELQV tEHQX tELQX tEHQZ OE# tGLQX tGHQX tGLQV tGHQZ DQ[7:0]/ DQ[15:8] Valid tBHQV BYTE# tBLQZ tELBL/tELBH Table 19: Read AC Characteristics M29F160F Symbol Alt Parameter Test Condition tAVAV tRC Address Valid to Next Address Valid CE# = VIL, OE# = VIL Min 55 ns tAVQV tACC Address Valid to Output Valid CE# = VIL, OE# = VIL Max 55 ns tELQX tLZ Chip Enable Low to Output Transition OE# = VIL Min 0 ns tELQV tCE Chip Enable Low to Output Valid OE# = VIL Max 55 ns tGLQX tOLZ Output Enable Low to Output Transition CE# = VIL Min 0 ns tGLQV tOE Output Enable Low to Output Valid CE# = VIL Max 20 ns tEHQZ tHZ Chip Enable High to Output Hi-Z OE# = VIL Max 15 ns tGHQZ tDF Output Enable High to Output Hi-Z CE# = VIL Max 15 ns tEHQX tGHQX tAXQX tOH Chip Enable, Output Enable or Address Transition to Output Transition Min 0 ns PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 55/5A – 47 Unit Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B AC Read Characteristics Table 19: Read AC Characteristics (Continued) M29F160F Symbol Alt Parameter tELBL tELBH tELFL tELFH tBLQZ tBHQV Test Condition 55/5A Unit Chip Enable to BYTE# Low or High – Max 3 ns tFLQZ BYTE# Low to Output Hi-Z – Max 15 ns tFHQV BYTE# High to Output Valid – Max 20 ns Note: PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 1. tELQX tGLQX tEHQZ and tGHQZ parameters: Sampled only, not 100% tested. 48 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B AC Write Characteristics AC Write Characteristics Figure 26: Write AC Waveforms, Write Enable Controlled tAVAV A[19:0]/ A–1 Valid tWLAX tWHEH tAVWL CE# tELWL tWHGL OE# tGHWL tWLWH WE# tWHWL tDVWH tWHDX DQ[7:0]/ DQ[15:8] Valid VCC tVCHEL R/B# tWHRL Table 20: Write AC Characteristics, Write Enable Controlled M29F160F Symbol Alternate tAVAV tWC Address Valid to Next Address Valid Min 55 ns tELWL tCS Chip Enable Low to Write Enable Low Min 0 ns tWLWH tWP Write Enable Low to Write Enable High Min 30 ns tDVWH tDS Input Valid to Write Enable High Min 20 ns tWHDX tDH Write Enable High to Input Transition Min 0 ns tWHEH tCH Write Enable High to Chip Enable High Min 0 ns tWHWL tWPH Write Enable High to Write Enable Low Min 15 ns tAVWL tAS Address Valid to Write Enable Low Min 0 ns tWLAX tAH Write Enable Low to Address Transition Min 30 ns Output Enable High to Write Enable Low Min 0 ns tGHWL Parameter 55/5A Unit tWHGL tOEH Write Enable High to Output Enable Low Min 0 ns tWHRL tBUSY Program/Erase Valid to RB# Low Max 20 ns PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 49 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B AC Write Characteristics Table 20: Write AC Characteristics, Write Enable Controlled (Continued) M29F160F Symbol Alternate tVCHEL tVCS Note: Parameter 55/5A VCC High to Chip Enable Low Min Unit 50 µs 1. tWHRL parameter: Sampled only, not 100% tested. Figure 27: Write AC Waveforms, Chip Enable Controlled tAVAV A[19:0]/ A–1 Valid tELAX tAVEL tEHWH WE# tWLEL tEHGL OE# tGHEL tELEH CE# tEHEL tDVEH tEHDX DQ[7:0]/ DQ[15:8] Valid VCC tVCHWL R/B# tEHRL Table 21: Write AC Characteristics, Chip Enable Controlled M29F160F Symbol Alt Parameter 55/5A Unit tAVAV tWC Address Valid to Next Address Valid Min 55 ns tWLEL tWS Write Enable Low to Chip Enable Low Min 0 ns tELEH tCP Chip Enable Low to Chip Enable High Min 30 ns tDVEH tDS Input Valid to Chip Enable High Min 20 ns tEHDX tDH Chip Enable High to Input Transition Min 0 ns tEHWH tWH Chip Enable High to Write Enable High Min 0 ns PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 50 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Reset Specifications Table 21: Write AC Characteristics, Chip Enable Controlled (Continued) M29F160F Symbol Alt Parameter tEHEL tCPH Chip Enable High to Chip Enable Low Min 15 ns tAVEL tAS Address Valid to Chip Enable Low Min 0 ns tELAX tAH Chip Enable Low to Address Transition Min 30 ns Output Enable High Chip Enable Low Min 0 ns tGHEL 55/5A Unit tEHGL tOEH Chip Enable High to Output Enable Low Min 0 ns tEHRL tBUSY Program/Erase Valid to RB# Low Max 20 ns tVCHWL tVCS VCC High to Write Enable Low Min 50 µs Note: 1. tEHRL parameter: Sampled only, not 100% tested. Reset Specifications Figure 28: Reset/Block Temporary Unprotect AC Waveforms WE#, CE#, OE# tPHWL, tPHEL, tPHGL R/B# tRHWL, tRHEL, tRHGL tPLPX RP# tPLYH tPHPHH Table 22: Reset/Block Temporary Unprotect AC Characteristics M29F160F Symbol Alt Parameter tPHWL tPHEL tPHGL tRH RP# High to Write Enable Low, Chip Enable Low, Output Enable Low Min 50 ns tRHWL tRHEL tRHGL tRB RB# High to Write Enable Low, Chip Enable Low, Output Enable Low Min 0 ns RP# Pulse Width Min 500 ns RP# Low to Read Mode Max 10 µs RP# Rise Time to VID Min 500 ns tPLPX tRP tPLYH tREADY tPHPHH tVIDR Note: PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 55/5A Unit 1. tPHWL tPHGL tRHWL tRHEL tRHGL tPLYH and tPHPHH parameters: Sampled only, not 100% tested. 51 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B PROGRAM/ERASE Characteristics PROGRAM/ERASE Characteristics Table 23: Program/Erase Characteristics Parameter Chip erase Min Typ Max Unit — 25 120 s M29F800F 12 60 M29F400F 6 30 M29F200F 3 15 6 s M29F160F Block erase (64KB) — 0.8 Erase suspend latency time — 20 25 µs Program (byte or word) — 11 200 µs — 24 120 s M29F800F 12 60 M29F400F 6 30 M29F200F 4 16 12 60 M29F800F 6 30 M29F400F 3 15 M29F200F 2 8 100,000 — — cycles 20 — — years Chip program (byte-by-byte) M29F160F Chip program (word-by-word) M29F160F — PROGRAM/ERASE cycles (per block) Data retention Notes: PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN s 1. Typical values are measured at room temperature and nominal voltages; typical and maximum values are samples, not 100% tested. 2. Chip erase, program, and chip program parameters: Maximum value measured at worst case conditions for both temperature and VCC after 100,000 PROGRAM/ERASE cycles. 3. Block erase and erase suspend latency parameter: Maximum value measured at worstcase conditions for both temperature and VCC. 52 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Package Dimensions Package Dimensions Figure 29: 48-Lead TSOP – 12mm x 20mm 1 48 0.50 TYP 12.00 +0.10 0.22 +0.05 24 0.80 TYP 25 1.00 +0.05 1.20 MAX 18.40 +0.10 20.00 +0.20 o Die 0.10 MIN/ 0.21 MAX 0.10 +0.05 3o + 2o 3 0.60 +0.10 0.08 MAX Note: PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 1. Drawing is not to scale. 53 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Package Dimensions Figure 30: 44-Lead Small-Outline – 500 Mil 28.50 ±0.13 23 44 16.03 +0.25 -0.26 0.18 MIN/ 0.28 MAX 12.60 ±0.13 8° 1 22 0.10 TYP 2.69 +0.10 3.00 MAX -0.13 0.35 MIN/ 0.50 MAX Note: PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 0.79 TYP 1.73 TYP 0.10 MAX 1.27 TYP 1. Drawing is not to scale. 54 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved. M29FxxxFT/B Revision History Revision History Rev. B – 2/14 • In Block and Chip Protection section, added block protect and chip unprotect flowcharts Rev. A – 2/13 • Initial Micron brand release 8000 S. Federal Way, P.O. Box 6, Boise, ID 83707-0006, Tel: 208-368-3900 www.micron.com/productsupport Customer Comment Line: 800-932-4992 Micron and the Micron logo are trademarks of Micron Technology, Inc. All other trademarks are the property of their respective owners. This data sheet contains minimum and maximum limits specified over the power supply and temperature range set forth herein. Although considered final, these specifications are subject to change, as further product development and data characterization sometimes occur. PDF: 09005aef845656da m29fxxxf/t_2mb-16mb.pdf - Rev. B 2/14 EN 55 Micron Technology, Inc. reserves the right to change products or specifications without notice. © 2013 Micron Technology, Inc. All rights reserved.